Microstructural investigation on the grain refinement occurring in Cu-doped Ni-Ti thin films
Microstructural investigation on the grain refinement occurring in Cu-doped Ni-Ti thin films
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Cu掺杂Ni-Ti薄膜晶粒细化的微观结构研究
DOI：
10.1016/j.scriptamat.2014.01.021
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发表时间：
2014
影响因子：
6
通讯作者：
Callisti M
中科院分区：
文献类型：
--
作者：
Callisti M
用透射电镜研究了Cu掺杂Ni-Ti薄膜的晶粒细化机理。溅射沉积的富（Ni，Cu）Ni-Ti-Cu薄膜呈现出由晶粒组成的柱状结构，晶粒的横向尺寸随着Cu含量的增加而减小。富铜的晶界偏析被发现变得突出的薄膜中含有较高的铜含量。这种偏析是由于一个非多晶结晶过程，降低了晶粒的生长速率，在薄膜中的铜含量增加。
The mechanism of grain refinement in Cu-doped Ni–Ti thin films has been investigated by transmission electron microscopy. Sputter-deposited (Ni,Cu)-rich Ni–Ti–Cu thin films exhibited a columnar structure consisting of grains whose lateral size decreased with increasing Cu content. Cu-rich grain boundary segregation was found to become prominent in films containing higher Cu contents. This segregation was attributed to a non-polymorphic crystallization process which lowered the grain growth rate as the Cu content in the films increased.