Impact of contact overlap on transconductance and noise in organic electrochemical transistors
Impact of contact overlap on transconductance and noise in organic electrochemical transistors
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DOI：
10.1088/2058-8585/ab4dc4
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发表时间：
2019-12-01
影响因子：
3.1
通讯作者：
Malliaras, George G.
中科院分区：
文献类型：
--
作者：
Polyravas, Anastasios G.;Curto, Vincenzo F.;Malliaras, George G.
由聚（3,4-乙烯二氧噻吩）掺杂聚苯乙烯磺酸盐（PEDOT:PSS）制成的有机电化学晶体管（OECTs）被用作生物电子学的放大换能器。虽然器件几何参数（如沟道面积和厚度）对性能的影响已被广泛探讨，但半导体薄膜与源极和漏极触点之间的重叠尚未被考虑。在这里，我们改变这种重叠，并探讨其对跨导和噪声的影响。我们表明，增加接触重叠并不改变稳态跨导的幅度，但它确实降低了截止频率。发现噪声与接触重叠无关，并根据电荷噪声模型而变化。结果表明，在最小重叠的情况下，PEDOT:PSS oect可以建立高质量的接触。
Organic electrochemical transistors (OECTs) from poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) are used as amplifying transducers for bioelectronics. Although the impact on performance of device geometry parameters such as channel area and thickness has been widely explored, the overlap between the semiconductor film and the source and drain contacts has not been considered. Here we vary this overlap and explore its impact on transconductance and noise. We show that increasing contact overlap does not alter the magnitude of the steady-state transconductance but it does decreases the cut-off frequency. Noise was found to be independent of contact overlap and to vary according to the charge noise model. The results show that high-quality contacts can be established in PEDOT:PSS OECTs with minimal overlap.