de Haas-van Alphen effect in two-dimensional and quasi-two-dimensional systems

de Haas-van Alphen effect in two-dimensional and quasi-two-dimensional systems
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二维和准二维系统中的德哈斯-范阿尔芬效应

DOI:
10.1103/physrevb.65.205405
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发表时间:
2001
期刊:
影响因子:
3.7
通讯作者:
Y. Hasegawa
Y. Hasegawa
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
K. Kishigi;Y. Hasegawa

文献摘要

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研究了二维和准二维系统中的De Haas2 1van Alphen(DHvA)振荡。给出了二维多带系统dHvA振荡的一般公式。利用这个公式,给出了双波段系统的dHvA振荡及其与温度的关系。通过引入层间跃迁{(t}_z}),我们考察了从二维到三维的交叉,其中化学势的振荡对磁化振荡起重要作用,而Lifshitz和Kosevich公式众所周知,化学势的振荡可以忽略不计。交叉出现在${4t}_{z}\ensuremath{\sim}8tabH/{\ensuremath{\varphi}}_{0},$处,其中a和b是晶格常数,${\susureath{\varphi}}_{0}$是通量量子,$8t$是总能带的宽度。我们还研究了准二维磁击穿系统中的dHvA振荡。量子干涉振荡如$\ensuremath{\beta}\ensuremath{-}\ensuremath{\alpha}$振荡和基波振荡都被抑制,而量子干涉振荡随着{t}_{z}$的增加而逐渐增大,在${t}_{z}/t\保证数学0.025处达到最大值。这种有趣的尺寸依赖关系可以在具有单轴压力的准二维有机导体中观察到。
We study the de Haas\char21{}van Alphen (dHvA) oscillation in two-dimensional and quasi-two-dimensional systems. We give a general formula of the dHvA oscillation in two-dimensional multiband systems. By using this formula, the dHvA oscillation and its temperature dependence for the two-band system are shown. By introducing the interlayer hopping ${(t}_{z}),$ we examine the crossover from two dimensions, where the oscillation of the chemical potential plays an important role in the magnetization oscillation, to three dimensions, where the oscillation of the chemical potential can be neglected as is well know by the Lifshitz and Kosevich formula. The crossover is seen at ${4t}_{z}\ensuremath{\sim}8tabH/{\ensuremath{\varphi}}_{0},$ where a and b are lattice constants, ${\ensuremath{\varphi}}_{0}$ is the flux quantum, and $8t$ is the width of the total-energy band. We also study the dHvA oscillation in quasi-two-dimensional magnetic-breakdown systems. The quantum interference oscillations such as $\ensuremath{\beta}\ensuremath{-}\ensuremath{\alpha}$ oscillation as well as the fundamental oscillations are suppressed by ${t}_{z},$ while the $\ensuremath{\beta}+\ensuremath{\alpha}$ oscillation gradually increases as ${t}_{z}$ increases and it has a maximum at ${t}_{z}/t\ensuremath{\approx}0.025.$ This interesting dependence on the dimensionality can be observed in the quasi-two-dimensional organic conductors with uniaxial pressure.