SIMS analysis of intentional in situ arsenic doping in CdS/CdTe solar cells
SIMS analysis of intentional in situ arsenic doping in CdS/CdTe solar cells
复制标题
CdS/CdTe 太阳能电池中有意原位砷掺杂的 SIMS 分析
DOI：
10.1088/0268-1242/23/1/015017
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发表时间：
2007
影响因子：
1.9
通讯作者：
D. Lamb
中科院分区：
文献类型：
--
作者：
R. L. Rowlands;S. Irvine;V. Barrioz;E. W. Jones;D. Lamb
采用金属有机化学气相沉积法（MOCVD）制备了一系列具有不同三（二甲氨基）胂（TDMAAs）分压的CdTe/CdS器件，以研究砷在样品中的掺入情况。利用次级离子质谱（SIMS）对生长层进行表征，砷浓度范围为1 × 1016 ~ 1 × 1019原子cm−3。砷浓度与TDMAAs蒸气浓度呈平方律关系。提出了TDMAAs前体二聚化分解的反应机理，并从反应动力学的角度进行了讨论。
A series of CdTe/CdS devices with different tris(dimethylamino)arsine (TDMAAs) partial pressures were grown by metal organic chemical vapour deposition (MOCVD) to investigate the incorporation of arsenic into the bulk. Characterization of the growth layers using secondary ion mass spectrometry (SIMS) showed arsenic concentrations ranging from 1 × 1016 to 1 × 1019 atoms cm−3. A square law dependence of arsenic concentration on the TDMAAs vapour concentration was observed. A reaction mechanism for the decomposition of TDMAAs precursor via dimerization is presented and discussed in terms of reaction kinetics.