Investigation of the photovoltaic performance ofthe polycrystalline silicon p-n junction by aphotothermal measurement
Investigation of the photovoltaic performance ofthe polycrystalline silicon p-n junction by aphotothermal measurement
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光热测量研究多晶硅p-n结的光伏性能
DOI：
10.1016/j.jnoncrysol.2011.11.016
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
K. Nishioka and T. Ikari
中科院分区：
文献类型：
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作者：
A. Fukuyama;D. Ishibashi;Y. Sato;K. Sakai,H. Suzuki;K. Nishioka and T. Ikari
为了建立一种新的评价晶界效应的方法，对具有不同晶界体积分数的多晶硅p-n结样品进行了压电光热（PPT）和表面光电压（SPV）测量。我们可以定义SPV/PPT的信号强度比作为光伏性能的关键指标。这是因为PPT信号意味着声子发射载流子损耗，而SPV表示表面和结界面处的光激发载流子积累。结果表明，随着晶界体积分数的增加，SPV/PPT比和太阳能电池效率降低。目前的实验结果表明，一个可以直接估计的过程中的多晶硅p-n结晶片的光伏性能，通过采用PPT和SPV的方法相结合，没有电极。由于PPT检测非辐射复合过程，因此本方法与激光束感生电流和光致发光成像方法是互补的。通过这些方法的互补使用，使研究晶界特性成为可能。
For establishing a new methodology for evaluating an effect of the grain boundaries, both the piezoelectric photo-thermal (PPT) and the surface photo-voltage (SPV) measurements of polycrystalline Si p–n junction samples with different volume fractions of grain boundaries were carried out. We could define the signal intensity ratio of SPV/PPT as the key indicator of photovoltaic performance. This is because the PPT signal implies the phonon emitting carrier loss, whereas the SPV denotes the photo-excited carrier accumulation at the surface and the junction interface. It was found that the SPV/PPT ratio and solar cell efficiency decreased with increasing volume fraction of the grain boundaries. Present experimental results demonstrated that one can directly estimate the photovoltaic performance of in-process polycrystalline Si p–n junction wafer by adopting the combination of the PPT and the SPV methodologies without electrodes. Since the PPT detects the non-radiative recombination process, present methodology and the laser-beam-induced current and the photoluminescence imaging methods are complementary. By complementary use of these methods, it becomes possible to investigate the characteristic of grain boundary.