The role of donor-acceptor pairs in the excitation of Eu-ions in GaN:Eu epitaxial layers
The role of donor-acceptor pairs in the excitation of Eu-ions in GaN:Eu epitaxial layers
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DOI：
10.1063/1.4879253
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发表时间：
2014-05-28
影响因子：
3.2
通讯作者：
Dierolf, V.
中科院分区：
文献类型：
--
作者：
Mitchell, B.;Poplawsky, J.;Dierolf, V.
在GaN中掺入Eu的性质和由此产生的发光效率已经被广泛地研究。通过对不同控制条件下生长的GaN：Eu样品进行比较研究，并使用各种实验技术，得出了大多数位的构型包含氮空位(VN)的结论。氮空位可以以两种对称性出现，这对样品的发光和磁性有很大的影响。少数族裔遗址的结构也已确定。我们认为，对于这两个位置，红色Eu发射的激发效率通过在Eu附近的施主-受体对的存在而得到改善。(C)2014 AIP出版有限责任公司。
The nature of Eu incorporation and resulting luminescence efficiency in GaN has been extensively investigated. By performing a comparative study on GaN:Eu samples grown under a variety of controlled conditions, and using a variety of experimental techniques, the configuration of the majority site has been concluded to contain a nitrogen vacancy (VN). The nitrogen vacancy can appear in two symmetries, which has a profound impact on the luminescence and magnetic properties of the sample. The structure of the minority site has also been identified. We propose that, for both sites, the excitation efficiency of the red Eu emission is improved by the presence of donor-acceptor pairs in the close vicinity of the Eu. (C) 2014 AIP Publishing LLC.