Charge transfer and low‐temperature electron mobility in a strained Si layer in relaxed Si1−xGex
Charge transfer and low‐temperature electron mobility in a strained Si layer in relaxed Si1−xGex
复制标题
松弛 Si1−xGex 中应变 Si 层中的电荷转移和低温电子迁移率
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
S. Laux
中科院分区：
文献类型：
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作者：
F. Stern;S. Laux
本文给出了在松弛Si1−xGex上外延生长的应变硅中电荷转移和低温电子迁移率与未掺杂间隔层厚度以及其他结构和材料参数的关系。在松弛的Si0.7Ge0.3上，Si的指示导带偏移为180±15 meV。在高迁移率样品中，由提供载流子的远端掺杂杂质引起的散射是主要的散射机制。界面散射增强的样品对迁移率的温度依赖性更强。
Calculated results for charge transfer and low‐temperature electron mobility in strained silicon grown epitaxially on relaxed Si1−xGex are presented versus the thickness of an undoped spacer layer and other structural and materials parameters. The indicated conduction band offset for Si on relaxed Si0.7Ge0.3 is 180±15 meV. Scattering by the remote doping impurities that supply the carriers is found to be the dominant scattering mechanism in high‐mobility samples. Samples with enhanced interface scattering are expected to have a stronger temperature dependence of mobility.