Large Electromechanical Responses Driven by Electrically Induced Dense Ferroelastic Domains: Beyond Morphotropic Phase Boundaries
Large Electromechanical Responses Driven by Electrically Induced Dense Ferroelastic Domains: Beyond Morphotropic Phase Boundaries
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DOI：
10.1021/acsaelm.0c00220
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发表时间：
2020-07-28
影响因子：
4.7
通讯作者：
Funakubo, Hiroshi
中科院分区：
文献类型：
--
作者：
Nakajima, Mitsumasa;Shimizu, Takao;Funakubo, Hiroshi
基于具有钙钛矿结构的铁电体的压电材料是最有用的材料之一，因为它们可以将电能转换为机械能，反之亦然。虽然压电性强烈地依赖于铁电畴密度，但是还没有通用的方法来可控地在铁电薄膜中制造致密的畴结构。在这里，我们报告了一种机制，以实现一个大的压电响应的基础上，在铁电薄膜中的电致致密的铁弹畴结构。我们证明了一个大的压电系数为310 pm/V的双极性和单极电场下，这是约3倍，大于在硅衬底上生长的单晶薄膜的tetrahydroxylPbZr0.4Ti0.6O3。原位拉曼和piezoresponse力显微镜相结合的分析表明，大的压电响应可以解释致密的铁弹畴壁的运动。这一机制为提高铁电材料的压电性能提供了一种普遍的方法。
Piezoelectric materials based on ferroelectrics with a perovskite structure are among the most useful materials because they can convert electrical energy into mechanical energy and vice versa. Although piezoelectricity strongly depends on ferroelastic domain density, there are no general methods to controllably fabricate dense domain structures in ferroelectric films. Here, we report a mechanism to achieve a large piezoresponse based on an electrically induced dense ferroelastic domain structure in ferroelectric films. We demonstrate a large piezoelectric coefficient of 310 pm/V under both bipolar and unipolar electric fields, which is about 3 times larger than that in epitaxial single-crystalline thin films of tetragonal PbZr0.4Ti0.6O3 grown on silicon substrates. Analysis by a combination of in situ Raman and piezoresponse force microscopy suggests that the large piezoelectric response can be explained by the motion of dense ferroelastic domain walls. This mechanism provides a general method to enhance the piezoelectric properties of ferroelectric materials.