A new strained-SOI/GOI dual CMOS technology based on local condensation technique

A new strained-SOI/GOI dual CMOS technology based on local condensation technique
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基于局部凝结技术的新型应变SOI/GOI双CMOS技术

DOI：
10.1109/.2005.1469220
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发表时间：
2005
期刊：
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005.
影响因子：
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通讯作者：
Shinichi Takagi
Shinichi Takagi
中科院分区：
--
文献类型：
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作者：
T. Tezuka;S. Nakaharai;Y. Moriyama;N. Hirashita;E. Toyoda;Naoharu Sugiyama;T. Mizuno;Shinichi Takagi

文献摘要

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首次采用局部凝聚技术实现了应变绝缘体上硅NMOSFET和应变绝缘体上硅锗PMOSFET的集成。P型和NMOSFET均表现出显著的迁移率和电流驱动增强。此外，还集成了超薄体SOI NMOSFET和应变Ge-on-Insulator PMOSFET。在GOI-PMOSFET中实现了超过4倍的空穴迁移率增强，从而导致与NMOSFET相当的电流驱动。
Strained Si-on-insulator NMOSFETs and strained SiGe-on-insulator PMOSFETs were integrated, for the first time, using the local condensation technique. Both P- and NMOSFETs exhibited significant mobility and current drive enhancements. Furthermore, ultrathin-body SOI NMOSFETs and strained Ge-on-Insulator PMOSFETs were also integrated. Over 4 times higher hole-mobility enhancement was achieved in the GOI-PMOSFET, resulting in a comparable current drive with the NMOSFET.