Self-organized nanodot formation on InP(100) by argon ion sputtering at normal incidence
Self-organized nanodot formation on InP(100) by argon ion sputtering at normal incidence
复制标题
法向入射氩离子溅射在 InP(100) 上自组织纳米点形成
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
A. Wee
中科院分区：
文献类型：
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作者：
S. K. Tan;A. Wee
我们证明了在1keV的入射入射下，用InP（100）的Ar+光束溅射形成了平均点直径为（73±10）nm和周期为85nm的六边形纳米点阵列。溅射时间越长，离子通量越大，纳米点的有序度越高。有序的六边形纳米点阵列形成在一个小的温度窗口接近室温。x射线光电子能谱和背散射电子成分成像（COMPO）结果表明，由于p的优先溅射，纳米点表面主要由元素In组成。基于标度理论，溅射表面的时间演化可分为早期粗化和后期有序两种不同的阶段。
We demonstrate the formation of hexagonal nanodot arrays with mean dot diameter and periodicity of (73±10) and 85nm, respectively, by 1keV Ar+ beam sputtering of InP(100) at normal incidence. The ordering of nanodots increases with sputtering duration and ion flux. Ordered hexagonal nanodot arrays form at a small temperature window near room temperature. X-ray photoelectron spectroscopy and backscattered electron composition imaging (COMPO) show that the surface of nanodots comprises primarily of elemental In due to the preferential sputtering of P. Based on scaling theory, the temporal evolution of the sputtered surface can be divided into two different regimes: coarsening in the early-time regime and ordering in the late-time regime.