Stability of quantum efficiency and visible light rejection of alkali halide photocathodes
Stability of quantum efficiency and visible light rejection of alkali halide photocathodes
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碱卤化物光电阴极量子效率和可见光抑制的稳定性
DOI：
10.1117/12.394023
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发表时间：
2000
影响因子：
2.6
通讯作者：
O. Siegmund
中科院分区：
文献类型：
--
作者：
A. Tremsin;O. Siegmund
我们研究了在紫外光照射下CsI和KBr薄膜的紫外敏感性退化，以及在微通道板上蒸发的CsI和KBr不透明光电阴极的可见光抑制稳定性。对于这两种材料，在光电阴极灵敏度截止点附近，相对量子探测效率的下降幅度最大，而它们的EUV响应几乎没有变化。光电阴极的老化可能与辐射入射角无关。在这两种材料中，CsI薄膜似乎更不受太阳的影响，更不容易受到紫外线照射的可见灵敏度激活。
We have studied the UV sensitivity degradation of CsI and KBr thin films under UV illumination and the stability of their visible light rejection for CsI and KBr opaque photocathodes evaporated on microchannel plates. For both materials the greatest degradation of the relative quantum detection efficiency was observed near the photocathode sensitivity cut off, while there was almost no change in their EUV response. The aging of the photocathodes is likely to be independent of the angle of radiation incidence. Of the two materials the CsI films appeared to be more solar blind and less subject to visible sensitivity activation by UV exposure.