Review—The Current and Emerging Applications of the III-Nitrides
Review—The Current and Emerging Applications of the III-Nitrides
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DOI：
10.1149/2.0101712jss
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发表时间：
2017
影响因子：
2.2
通讯作者：
Chuanle Zhou;A. Ghods;V. Saravade;P. Patel;Kelcy L. Yunghans;Cameron Ferguson;Yining Feng;B. Kucukgok;N. Lu;I. Ferguson
中科院分区：
文献类型：
--
作者：
Chuanle Zhou;A. Ghods;V. Saravade;P. Patel;Kelcy L. Yunghans;Cameron Ferguson;Yining Feng;B. Kucukgok;N. Lu;I. Ferguson
III族氮化物由于其直接带隙范围宽、高电子迁移率、高热稳定性和许多其他优异性能而作为有前途的材料在各种应用中引起了相当大的关注。基于III族氮化物的发光二极管彻底改变了固态照明行业。基于III族氮化物的太阳能电池和热电发电机支持可持续能源的发展，与硅相比，III族氮化物是功率和射频（RF）电子产品的更好替代品。掺杂的III-氮化物的磁性和对辐射的敏感性可以有助于新型自旋电子和核探测器件。本文将综述III族氮化物材料的特性及其在LED、太阳能电池、功率和射频（RF）电子学、磁性器件、热电和核探测中的相应应用。列举了典型的电、光、热电、磁性能，介绍了目前的研究现状，并对未来的应用进行了展望。通常由GaN及其与Al和In的合金组成的III族氮化物是化合物半导体材料，具有上级特性和良好的生长技术1，使其能够在广泛的应用范围中使用。III族氮化物具有六方纤锌矿结构和连续的合金系统，具有从6.2 eV（AlN）到3.4 eV（GaN）到0.7 eV（InN）的可调谐直接带隙2。这种从深紫外（UV）到红外区域的宽覆盖范围的直接带隙在光电子学中有多种应用，例如发光二极管（LED）、激光器、光电探测器和太阳能电池。GaN被认为具有高击穿场、高热导率和高电子迁移率，使GaN成为高功率和RF电子器件的优秀候选材料。
III-Nitrides are attracting considerable attention as promising materials for a wide variety of applications due to their wide coverage of direct bandgap range, high electron mobility, high thermal stability and many other exceptional properties. The light-emitting diodes based on III-Nitrides revolutionize the solid-state lighting industry. III-Nitrides based solar cells and thermoelectric generators support the sustainable energy progress, and the III-Nitrides are better alternatives for power and radio frequency (RF) electronics compared with silicon. The doped III-Nitrides’ magnetic properties and sensitivity to radiation can contribute to novel spintronic and nuclear detection devices. This paper will review III-nitride material properties and their corresponding applications in LEDs, solar cells, power and radio frequency (RF) electronics, magnetic devices, thermoelectrics and nuclear detection. The typical values of electrical, optical, thermoelectric, magnetic properties are cited, the current state of art investigations are reported, and the future applications are estimated. The III-Nitrides, typically composed of GaN and its alloys with Al and In, are compound semiconductor materials with superior properties and well developed growth techniques 1 that has enabled their use in a board range of applications. The III-Nitrides have a hexagonal wurtzite structure and a continuous alloy system with tunable direct bandgaps from 6.2 eV (AlN) through 3.4 eV (GaN) to 0.7 eV (InN) 2 This wide coverage of direct bandgap range from deep- ultraviolet (UV) to infrared region promises a variety of applications in optoelectronics, such as light-emitting diodes (LEDs), lasers, pho- todetectors and solar cells. GaN is recognized with high breakdown field, high thermal conductivity, and high electron mobility, making GaN an excellent candidate for high power and RF electronic devices.