Pressure-induced Kondo semiconductor : The filled skutterudite compound CeRu4Sb12
Pressure-induced Kondo semiconductor : The filled skutterudite compound CeRu4Sb12
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DOI：
10.1103/physrevb.79.014441
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发表时间：
2009-01
影响因子：
3.7
通讯作者：
N. Kurita;M. Hedo;M. Koeda;M. Kobayashi;H. Sato;H. Sugawara;Y. Uwatoko
中科院分区：
文献类型：
--
作者：
N. Kurita;M. Hedo;M. Koeda;M. Kobayashi;H. Sato;H. Sugawara;Y. Uwatoko
We report electrical transport and x-ray studies under high pressure of the filled skutterudite compound. Electrical resistivity measurements in the temperature range 2–300 K and under hydrostatic pressures up to 10.0 GPa have revealed a pressure-induced metal-semiconductor transition above 5.0 GPa in. The energy gap in the semiconducting state ofestimated from an activation law increases with a pressure coefficient of. On the other hand, a high-pressure x-ray study has determined the relationship between lattice constant and energy gap ofunder high pressure. We suggest that an electronic mechanism of a semiconducting state inunder high pressure could originate from an enhancedhybridization and that the-induced state could be categorized as a Kondo semiconductor.
