One-Dimensional Multi-Channel Photonic Crystal Resonators Based on Silicon-On-Insulator With High Quality Factor
One-Dimensional Multi-Channel Photonic Crystal Resonators Based on Silicon-On-Insulator With High Quality Factor
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DOI：
10.3389/fphy.2018.00033
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发表时间：
2018-05-08
影响因子：
3.1
通讯作者：
Baldycheva, Anna
中科院分区：
文献类型：
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作者：
Faneca, Joaquin;Perova, Tatiana S.;Baldycheva, Anna
我们从理论上和实验上证明了基于具有耦合三腔模式（或缺陷）的硅空气一维光子晶体（1D PhC）的法布里-珀罗（FP）谐振器。这些缺陷是通过用主动可重构流体填充 1D PhC 中选定的空气通道来实现的。这些 FP 谐振器的光学特性的模拟是在宽红外光谱范围内进行的。结果表明，通过同时改变所有三个通道中流体的折射率n(c)，可以在红外范围内不同阶的宽阻带内获得一组窄三重共振峰。此外，在 n(c) 的某些值下，三重共振峰会分裂成双峰和具有明显更大品质因数 Q = 21,200 的单峰。制造了基于绝缘体上硅平台的原型器件，并通过电光和光谱测量进行了表征。电光测量证明了单独或同时控制 FP 通道中填料的折射率的可能性。使用光纤耦合在 1540-1630 nm 范围内进行的光谱测量证实，在没有向 FP 通道施加电场的情况下，第三阻带中存在三重共振峰。当向中间通道施加 10 V 电压时，单峰 Q 值增加至 3720。
We have theoretically and experimentally demonstrated a Fabry-Perot (FP) resonators based on a Si-air one-dimensional photonic crystal (1D PhC) with coupled triple-cavity modes (or defects). These defects are obtained by filling selected air channels in the 1D PhC with an actively reconfigurable fluid. Simulations of the optical properties of these FP resonators were performed in the wide infrared spectral range. It is shown that by changing the refractive index, n(c), of the fluid simultaneously in all three channels, a set of narrow triple resonance peaks can be obtained within wide stop-bands of different order in the infrared range. In addition, at certain values of n(c), splitting of the triple resonance peaks into a doublet and a single peak with a significantly larger quality factor, Q = 21,200, occurs. Prototype devices based on Silicon-On-Insulator platform were fabricated and characterized by electro-optical and spectroscopic measurements. The electro-optical measurements demonstrate the possibility of refractive index manipulation of the filler in the FP channels individually or simultaneously. Spectroscopic measurements performed in the range 1540-1630 nm using fiber-coupling confirm the presence of triple resonance peaks in the 3rd stop-band in the absence of an electric field applied to the FP channels. At an applied voltage of 10 V to the middle channel, an increase of Q to 3720 in the single peak is registered.