p‐type doping of GaSb by Ge and Sn grown by molecular beam epitaxy
p‐type doping of GaSb by Ge and Sn grown by molecular beam epitaxy
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DOI：
10.1063/1.348518
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发表时间：
1991-03
影响因子：
3.2
通讯作者：
K. Longenbach;S. Xin;W. I. Wang
中科院分区：
文献类型：
--
作者：
K. Longenbach;S. Xin;W. I. Wang
报道了Ge和Sn分子束外延生长GaSb的P型掺杂。这两种杂质都表现良好，Ge的自由受主浓度高达2×1019 cm−3，锡的自由受主浓度高达5×1018 cm−3。此外，在生长过程中的反射高能电子衍射测量表明，在GaSb中没有出现在GaSb中常见的锡的偏析。由于Sb的共价键半径较大，因此不存在Sb的偏析以及Ge和Sn掺杂的p型性质。这些掺杂剂很重要，因为它们为Sb基材料的p型掺杂提供了一种极好的替代方案。
p‐type doping of molecular beam epitaxy grown GaSb by Ge and Sn has been demonstrated. Both impurities are well behaved with demonstrated free acceptor concentrations as high as 2×1019 cm−3 for Ge and 5×1018 cm−3 for Sn. In addition reflection high‐energy electron diffraction measurements during growth indicate that Sn segregation which is common in GaAs does not occur in GaSb. The absence of Sn segregation as well as the p‐type nature of Ge and Sn dopants is attributed to the large covalent bond radius of Sb. These dopants are important since they provide an excellent alternative to Be for p‐type doping of Sb based materials.