Selective etching of ZnTe in HF:H2O2:H2O solution: Interpretation of extended defect-related etch figures
Selective etching of ZnTe in HF:H2O2:H2O solution: Interpretation of extended defect-related etch figures
复制标题
HF:H2O2:H2O 溶液中 ZnTe 的选择性蚀刻:扩展缺陷相关蚀刻图的解释
DOI:
10.1002/crat.201400265
复制
发表时间:
2015
影响因子:
1.5
通讯作者:
Jie Wanqi
中科院分区:
文献类型:
--
作者:
Yang Rui;Jie Wanqi
HF:H2O2:H2O solution (40%wt.HF: 30wt.%H2O2: H2O, 3:2:1 by volume) was used to reveal extended defects (line, face and volume defects) in bulk ZnTe crystals grown from Te solution. The etch patterns were analyzed based on their size, shape and distribution. The etch figures, both in the shape of pits and hillocks with high resolution, show forms controlled by the symmetries of the respective faces were produced. Two different sizes of pits were observed, the larger‐size pits correspond to dislocations penetrating the surface, however, the smaller‐size texture pits are produced on the defect‐free region, which serve as standard pits on respect faces. The face defects, such as grain boundaries, sub‐grain boundaries, dislocation walls, twins and stacking faults, can be all displayed clearly. Another essential feature of the etchant is that, it can effectively dissolve Te‐rich phase (Te inclusion/precipitates), which makes it promising to reveal the shape of this volume defect.