Radiation measurements by a cryogenic pn junction InSb detector with operating temperatures up to 115 K
Radiation measurements by a cryogenic pn junction InSb detector with operating temperatures up to 115 K
复制标题
使用工作温度高达 115 K 的低温 pn 结 InSb 探测器进行辐射测量
DOI：
10.1063/1.1599067
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发表时间：
2003
影响因子：
1.6
通讯作者：
M. Katagiri
中科院分区：
文献类型：
--
作者：
I. Kanno;F. Yoshihara;R. Nouchi;O. Sugiura;Y. Murase;T. Nakamura;M. Katagiri
Pn结型辐射探测器与InSb衬底制作。该探测器的电阻比以前报道的肖特基型探测器高1000倍。从电子和空穴贡献的角度分析了双光子晶体的输出脉冲。在115 K的工作温度下测量了241 Am α粒子的能谱。估计了探测器的固有电压。
Pn junction-type radiation detectors were fabricated with an InSb substrate. The detectors had 1000 times higher resistances than those of previously reported Schottky-type detectors. The output pulses of the preamplifier were analyzed from the point of view of the contribution of electrons and holes. The energy spectra of 241Am alpha particles were measured at operating temperatures of up to 115 K. The inherent voltage of the detector was estimated.