Transfer printing of gate dielectric and carrier doping with poly(vinyl-alcohol) coating to fabricate top-gate molybdenum disulfide field-effect transistors
Transfer printing of gate dielectric and carrier doping with poly(vinyl-alcohol) coating to fabricate top-gate molybdenum disulfide field-effect transistors
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DOI：
10.35848/1347-4065/abc6be
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发表时间：
2020-11
影响因子：
1.5
通讯作者：
T. Kawanago;Takahiro Matsuzaki;S. Oda
中科院分区：
文献类型：
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作者：
T. Kawanago;Takahiro Matsuzaki;S. Oda
本研究重新发布的制造顶栅二硫化钼（MoS2）场效应晶体管（FET）的转移印刷的栅极电介质结合聚（乙烯醇）（PVA）涂层的载流子掺杂。旋涂的PVA膜增加了MoS2中的载流子浓度，而背栅MoS2 FET不能被关断。具有PVA涂层的转移的顶栅结构使得可以在不对MoS2造成永久性损坏的情况下关闭所制造的器件。本研究结果为二维材料基功能器件的研究和开发提出了有趣的方向。
This study reposts the fabrication of top-gate molybdenum disulfide (MoS2) field-effect transistor (FET) by the transfer printing of a gate dielectric in conjunction with a poly(vinyl-alcohol) (PVA) coating for carrier doping. The spin-coated PVA film increases the carrier concentration in MoS2, while the back-gate MoS2 FET cannot be turned off. The transferred top-gate structure with the PVA coating makes it possible to turn off the fabricated device without permanent damage to MoS2. The results of this study suggest interesting directions for the research and development of two-dimensional material-based functional devices.