One-Step Cleaning Solution to Replace the Conventional RCA Two-Step Cleaning Recipe for Pregate Oxide Cleaning
One-Step Cleaning Solution to Replace the Conventional RCA Two-Step Cleaning Recipe for Pregate Oxide Cleaning
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一步式清洗解决方案取代传统 RCA 两步式清洗方法，用于预栅极氧化物清洗
DOI：
10.1149/1.1369374
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
C. Lu
中科院分区：
文献类型：
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作者：
T. Pan;T. Lei;T. Chao;M. Liaw;F. Ko;C. Lu
dMerck-Kanto，Advanced Chemicals Limited，Taoyuan，Taiwan本工作提出了一种先进的湿化学一步清洗工艺，该工艺省略了盐酸/过氧化氢/水混合物~HPM！在RCA的步骤。研制了一种新的一步清洗液，用于清洗预栅氧化层，以取代传统的RCA两步清洗配方，即使用氨水/过氧化氢~或SC-1！和HPM ~或SC-2！步四甲基氢氧化铵~TMAH！和乙二胺四乙酸~EDTA！添加到RCA SC-1清洗液中以提高清洗效率。从实验结果来看，这种一步清洗液可以显著去除裸硅片表面的颗粒和金属污染。研究了各种清洗配方的效果及其与硅表面的相互作用机理。表面吸附和双电层模型可以解释TMAH溶液的表面行为。基于该模型，可以实现颗粒，表面粗糙度和金属污染物。据观察，金属氧化物半导体电容器在用这种新型溶液清洗后的电性能优于常规RCA清洗后的电性能。此外，在80°C下将NH 4 OH、四甲基氢氧化铵、乙二胺四乙酸和H2 O2组合3 min的清洗方法在颗粒去除、金属清洗、表面光滑度和电性能方面表现出高性能。因此，这种一步清洗工艺是非常有前途的未来大尺寸的硅片清洗，由于节省时间，成本低，高性能的优点。
dMerck-Kanto, Advanced Chemicals Limited, Taoyuan, Taiwan This work proposes an advanced wet chemical one-step cleaning process which omits the hydrochloric acid/hydrogen peroxide/ water mixture ~HPM! step in RCA. A novel one-step cleaning solution had been developed for pregate oxide cleaning to replace the conventional RCA two-step cleaning recipe, which used ammonia/hydrogen peroxide ~or SC-1! and HPM ~or SC-2! step. Tetramethylammonium hydroxide ~TMAH! and ethylenediaminetetraacetic acid ~EDTA! were added into the RCA SC-1 cleaning solution to enhance cleaning efficiency. From the experimental results, the particles and metallic contamination on the bare Si wafer surface could be removed significantly by applying this one-step cleaning solution. The effectiveness of various cleaning recipes and their interaction mechanism with silicon surfaces were studied. The surface adsorption and double layer models could explain the surface behavior of TMAH solutions. Based on the model, the particle, surface roughness and metallic contaminants can be realized. It was observed that the electrical properties of metal oxide semiconductor capacitors after cleaning with this novel solution were better than those after the conventional RCA cleaning. Besides, the cleaning method combining NH4OH, tetramethylammonium hydroxide, ethylenediaminetetraacetic acid, and H2O2, at 80°C for 3 min showed high performance on particle removal, metal cleaning, surface smoothness, and electrical properties. Hence, this one-step cleaning process is very promising for future large sized silicon wafer cleaning due to the advantages of time-saving, low cost, and high performance.