Electron-transporting phenazinothiadiazoles with engineered microstructure

Electron-transporting phenazinothiadiazoles with engineered microstructure
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DOI:
10.1039/c4tc01992j
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发表时间:
2014-01-01
影响因子:
6.4
通讯作者:
Bunz, Uwe H. F.
Bunz, Uwe H. F.
中科院分区:
材料科学2区
文献类型:
--
作者:
Lindner, Benjamin D.;Paulus, Fabian;Bunz, Uwe H. F.

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通过邻醌与炔基化的5,6-二氨基-2,1,3-苯并噻二唑缩合,合成了新型三异丙基硅基炔基化吩嗪并噻二唑。目标显示在固态中的头对头二聚化,根据计算的转移积分,这应该有利于电荷传输。当从溶液中旋涂时,化合物形成多晶薄膜。两种衍生物是有吸引力的电子传输材料,在薄膜晶体管(TFT)中的平均电子迁移率me为0.07 cm(2)V-1 s(-1)。
Novel triisopropylsilyl-(TIPS)-alkynylated phenazinothiadiazoles were prepared by condensation of ortho-quinones and an alkynylated 5,6-diamino-2,1,3-benzothiadiazole. The targets show head-to-head dimerisation in the solid state, which, according to calculated transfer integrals should favor charge transport. The compounds form polycrystalline thin films when spin cast from solution. Two derivatives are attractive electron transporting materials with an average electron mobility me in thin film transistors (TFT) of 0.07 cm(2) V-1 s(-1).