Thermoelectric properties of Al-doped Mg2Si thin films deposited by magnetron sputtering
Thermoelectric properties of Al-doped Mg2Si thin films deposited by magnetron sputtering
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磁控溅射沉积Al掺杂Mg2Si薄膜的热电性能
DOI：
10.1016/j.apsusc.2016.06.041
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发表时间：
2016-11-15
影响因子：
6.7
通讯作者：
Wen, Cui-lian
中科院分区：
文献类型：
--
作者：
Chen, Zhi-jian;Zhou, Bai-yang;Wen, Cui-lian
采用双靶交替磁控溅射技术制备了Al掺杂Mg2Si薄膜，研究了不同Al掺杂含量对Al掺杂Mg2Si薄膜热电性能的影响。分别使用能量色散X射线光谱（EDS）、X射线衍射（XRD）、霍尔系数测量和塞贝克系数测量系统检查了薄膜的组成、晶体结构、电子输运性能和热电性能。 EDS结果表明，溅射功率为30 W、60 W和90 W的Al靶材掺杂薄膜中Al含量分别为0.68 at.%、1.56 at.%和2.85 at.%。 XRD结果表明，随着Al掺杂量的增加，Mg2Si的衍射峰变得更强。霍尔系数测量和塞贝克系数测量系统的结果表明所有样品都是n型的。 Al掺杂Mg2Si薄膜的电导率明显大于未掺杂Mg2Si薄膜的电导率，并且随着Al掺杂含量的增加而增加。随着温度的升高，Mg2Si基薄膜的塞贝克系数绝对值先增大后减小。对于 1.56 at.% Al 掺杂 Mg2Si 薄膜，在 573 K 下获得的最大功率因数为 3.8 mW m(-1) k(-2)。(C) 2016 Elsevier B.V. 保留所有权利。
The Al-doped Mg2Si thin films were fabricated by two-target alternative magnetron sputtering technique, and the influences of different Al doping contents on the thermoelectric properties of Al-doped Mg2Si thin films were investigated. The compositions, crystal structures, electronic transport properties and thermoelectric properties of the thin films were examined using energy dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), Hall coefficient measurement and Seebeck coefficient measurement system, respectively. The EDS results show that the thin films doped with Al target sputtering power of 30 W, 60 W and 90 W have the Al content of 0.68 at.%, 1.56 at.% and 2.85 at.%, respectively. XRD results indicate that the diffraction peaks of Mg2Si become stronger with increasing Al dopant. The results of Hall coefficient measurement and Seebeck coefficient measurement system reveal that all the samples are n-type. The conductivities of Al-doped Mg2Si thin films are significantly greater than that of undoped Mg2Si thin film, and increase with increasing Al doping content. With the increase of temperature, the absolute value of the Seebeck coefficients of Mg2Si base thin films increase firstly and then decrease. The maximum power factor obtained is 3.8 mW m(-1) k(-2) for 1.56 at.% Al-doped Mg2Si thin film at 573 K. (C) 2016 Elsevier B.V. All rights reserved.