Effects of Ga Doping and Substrate Temperature on Electrical properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition
Effects of Ga Doping and Substrate Temperature on Electrical properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition
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Ga 掺杂和衬底温度对等离子体辅助沉积 ZnO 透明导电薄膜电性能的影响
DOI：
10.1143/jjap.50.05fb13
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发表时间：
2011
影响因子：
1.5
通讯作者：
T.Muranaka
中科院分区：
文献类型：
--
作者：
松井裕章;他;T.Muranaka
在低至50 ℃的温度下，通过等离子体辅助沉积在玻璃和塑料衬底上沉积透明导电ZnO薄膜。利用霍尔测量和X射线衍射研究了Ga掺杂和生长温度对薄膜电学性能的影响。对于50和300 C生长，载流子密度随着Ga掺杂而增加。对于低温生长，在未掺杂的ZnO薄膜的载流子迁移率是相同的，在高温生长的薄膜，但它变得更低的Ga掺杂水平变得更高。低温生长的高Ga掺杂薄膜在c轴和a轴方向上都有晶格膨胀。讨论了迁移率降低与晶格膨胀之间的关系。
Transparent conducting ZnO films are deposited by plasma-assisted deposition on glass and plastic substrates at temperatures as low as 50 C. The effects of Ga doping and growth temperature on electrical properties are studied using Hall measurement and X-ray diffraction. Carrier density increases with Ga doping for both 50 and 300 C growth. For low-temperature growth, the carrier mobility in undoped ZnO films is the same as that in high-temperature-grown films, but it becomes lower as the Ga doping level becomes higher. Lattice expansion in both c and a axes directions is observed for low-temperature-grown highly Ga-doped films. The relation between the mobility reduction and the lattice expansion is discussed.