Real-time Monitoring of Charge-pumping Process for SiO2/Si Interface Analysis
Real-time Monitoring of Charge-pumping Process for SiO2/Si Interface Analysis
复制标题
实时监测 SiO2/Si 界面分析的电荷泵过程
DOI：
10.1109/qir.2017.8168450
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
T. Watanabe and Y. Ono
中科院分区：
文献类型：
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作者：
M. Hori;T. Watanabe and Y. Ono
时域电荷泵技术是一种新的分析半导体界面缺陷的技术，它监测电荷泵过程中的瞬态电流。本文简要介绍了我们近年来在时域电荷泵技术方面的研究进展，主要针对金属-氧化物-半导体界面缺陷进行了详细的分析。我们特别表明，时域电荷泵使我们能够独立地获得电子和空穴的捕获截面，并将电子发射光谱分解为具有不同时间常数的两个分量。它还表明，它使我们能够调查复杂的电流流动过程中的电荷泵在绝缘体上硅器件。
Time-domain charge pumping, which monitors transient currents during the charge pumping process, is a novel technique for analyzing interface defects of semiconductors. In this paper, we make a brief introduction about our recent works on the development of the time domain charge pumping, aiming at the detailed analysis of metal-oxide-semiconductor interface defects. We in particular show that the time-domain charge pumping enables us to obtain capture cross sections of electrons and holes independently, and to resolve electron-emission spectra into two components with different time constants. It is also shown that it allows us to investigate complicated current flow during the charge pumping process in silicon-on-insulator devices.