Three-dimensional Si islands on Si(001) surfaces
Three-dimensional Si islands on Si(001) surfaces
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Si(001) 表面上的三维硅岛
DOI：
10.1103/physrevb.65.045307
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发表时间：
2001
影响因子：
3.7
通讯作者：
M. Ichikawa
中科院分区：
文献类型：
--
作者：
A. Shklyaev;M. Ichikawa
在Si（001）衬底上生长了数密度为1012 ~ 1013 cm - 2、尺寸为3-10 nm的三维Si岛，并在Si（001）衬底上覆盖了0.3nm厚的SiO2层。岛在高于460 °C的生长温度下外延到Si（001）衬底。它们在400至570°C的温度下呈半球形，在570至640°C的温度下呈金字塔形。在锥形岛形成过程中，SiO2层完全脱附.通过Si吸附原子与SiO2反应的SiO2分解和Si吸附原子与成核岛的附着之间的竞争决定了这种生长图像。吸附原子在SiO2和裸Si之间以及Si表面台阶边缘扩散的势能势垒也分别导致了岛的半球形和金字塔形。估算表明，岛形核是通过单个Si吸附原子与SiO2之间的反应发生的.用本方法可以在Si中形成δ掺杂Si层的点变体，也可以在SiO2基体中形成Si点。
Three-dimensional Si islands with a number density from 10 1 2 to 10 1 3 cm - 2 and size of 3-10 nm were grown on Si(001) substrates covered with 0.3-nm-thick SiO 2 layers. The islands were epitaxial to the Si(001) substrate at growth temperatures above 460 °C. They had a hemispherical shape at temperatures between 400 and 570°C and a pyramidal shape at temperatures from 570 to 640°C. The SiO 2 layer was completely desorbed during the pyramidal island formation. Competition between SiO 2 decomposition through the reaction of Si adatoms with SiO 2 and attachment of Si adatoms to nucleating islands determines this growth picture. The potential energy barriers for adatom diffusion between areas of SiO 2 and bare Si and at step edges on Si surfaces are also responsible for the hemispherical and pyramidal shapes of the islands, respectively. Estimates showed that island nucleation occurred through the reaction between individual Si adatoms and SiO 2 . A dot modification of δ-doped Si layers in Si and also Si dots in a SiO 2 matrix can be created by the present method.