Temperature dependent transient velocity and mobility studies in an organic field effect transistor
Temperature dependent transient velocity and mobility studies in an organic field effect transistor
复制标题
有机场效应晶体管中与温度相关的瞬态速度和迁移率研究
DOI：
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发表时间：
2010
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影响因子：
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通讯作者：
A. Dodabalapur
中科院分区：
文献类型：
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作者：
L. Dunn;A. Dodabalapur
我们研究了并五苯有机场效应晶体管（OFET）的温度依赖性行为，通过测量直流电流和电压特性和瞬态响应的OFET施加在源极接触尖电压脉冲。使用标准晶体管方程来提取直流场效应迁移率μFE，并且使用OFET的导通时间来提取动态迁移率μdynamic。依赖于温度的测量被用来提取场效应和动态激活能，Ea，FE和Ea，动态，在一个范围内的有效栅极电压，以改变沟道中的电荷载流子密度。我们发现在较高温度下μdynamic>μFE，而在较低温度下μdynamic<μFE。我们将动态迁移率和场效应迁移率之间的这种变化关系归因于μFE是沟道中所有电荷载流子的平均迁移率，而μdynamic是沟道中最快电荷载流子迁移率的度量。我们也…
We have investigated the temperature-dependent behavior of a pentacene organic field effect transistor (OFET) by measuring dc current and voltage characteristics and the transient response of the OFET to a sharp voltage pulse applied at the source contact. Standard transistor equations were used to extract the dc field-effect mobility, μFE, and the turn on time of the OFET was used to extract a dynamic mobility, μdynamic. Temperature dependent measurements were used to extract both field-effect and dynamic activation energies, Ea,FE and Ea,dynamic, over a range of effective gate voltages in order to vary the charge carrier density in the channel. We found that at higher temperatures μdynamic>μFE, while at lower temperatures μdynamic<μFE. We attribute this varying relationship between dynamic and field effect mobilities to the fact that μFE is an average mobility of all the charge carriers in the channel, while μdynamic is a measure of the mobility of the fastest charge carriers in the channel. We also fou...