Difficulties in deducing disordering mechanisms from experimental studies of disorder-ion fluence functions in ion irradiation of semiconductors
Difficulties in deducing disordering mechanisms from experimental studies of disorder-ion fluence functions in ion irradiation of semiconductors
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从半导体离子辐照中无序离子注量函数的实验研究中推导无序机制的困难
DOI：
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发表时间：
1979
期刊：
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通讯作者：
G. Carter
中科院分区：
文献类型：
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作者：
R. Webb;G. Carter
本文提出了一个详细的低温离子辐照半导体非晶产生的复合模型，并给出了对无序密度分布的逐步近似。对该模型和其它模型进行了数值计算，并进行了一系列比较。结果表明，所有考虑的模型可以导致在数值上类似的非晶离子注量曲线，因此，这种实验数据的解释可能是困难的。它进一步表明，如果在一个实验过程中无序，但不是非晶区域也进行了分析，然后所得到的无序-通量曲线可能是误导，几乎不可能解释，没有进一步的分析，例如，剂量率效应或直接观察缺陷密度。
Abstract A detailed composite model of amorphousness production during ion irradiation of semiconductors at low temperatures and the stepwise approximation to the disorder density profile for disorder accumulation is presented. Numerical calculations of this and other models are performed and a series of comparisons are made. It is shown that all the models considered can result in numerically similar amorphousness-ion fluence curves and hence that interpretation of experimental data of this kind can be difficult. It is further shown that if in an experimental procedure disordered but not amorphous regions are also analysed then the resulting disorder-fluence curves can be misleading and almost impossible to interpret without further analyses of, for example, dose rate effects or direct observation of defect density.