Electric-field-enhanced growth of carbon nanotubes for scanning probe microscopy
Electric-field-enhanced growth of carbon nanotubes for scanning probe microscopy
复制标题
用于扫描探针显微镜的碳纳米管的电场增强生长
DOI：
10.1088/0957-4484/13/1/314
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发表时间：
2002
期刊：
影响因子：
3.5
通讯作者：
M. Esashi
中科院分区：
文献类型：
--
作者：
T. Ono;H. Miyashita;M. Esashi
研究了电场对热丝化学气相沉积碳纳米管（CNT）生长的影响。使用氢气稀释的乙炔(C2H2)气体作为CNT生长的源气体，并且在生长过程中向样品台施加-300μV的偏压。通过在表面上溅射薄催化金属(Ni)膜来制备其上生长CNT的硅衬底，并且CNT从衬底上的硅突起的尖端选择性地生长。研究发现，在这种情况下，施加具有负衬底偏压的高静电场可以增强碳纳米管的生长。这种效应已成功应用于由硅悬臂支撑的碳纳米管尖端的制造，用于扫描探针显微镜。
The influence of an electric field on carbon nanotube?(CNT) growth using hot-filament chemical vapour deposition is investigated. Acetylene (C2H2) gas diluted with hydrogen is used as the source gas for the growth of CNTs, and a bias voltage of -300?V is applied to the sample stage during growth. The silicon substrate onto which the CNT is grown is prepared by sputtering a thin catalysed metal (Ni) film onto the surface, and the CNT is selectively grown from the tip of a silicon protrusion on the substrate. It is found that the application of a high electrostatic field with a negative substrate bias enhances the growth of CNTs in this situation. This effect is successfully applied to the fabrication of a CNT tip supported by a silicon cantilever for use in scanning probe microscopy.