Cyclotron resonance revisited: the effect of carrier heating
Cyclotron resonance revisited: the effect of carrier heating
复制标题
回旋共振重温：载流子加热的影响
DOI：
10.1063/1.1994551
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
W. Jantsch
中科院分区：
文献类型：
--
作者：
H. Malissa;Z. Wilamowski;W. Jantsch
在标准的X波段电子顺磁共振装置中，我们观察和研究了高阻(>；1000Ωcm)FZ-Si中高迁移率光激发载流子的回旋共振(CR)。在2.5K和低微波(MW)功率下，可以看到一系列非常窄的CR线，允许非常精确地评估回旋加速器的质量。此外，我们还利用窄线宽研究了微波吸收引起的电子加热。1.2mT的最小CR线宽意味着电子迁移率大于7⋅106cm2/vs。模拟线宽发现，当晶格温度为2K时，当功率为10 mW时，电子温度达到10K，而在1μW时，电子温度升高了25mK，尽管样品处于最小电场下的微波腔内。在较低的晶格温度下，电子加热更大。
We observe and investigate the cyclotron resonance (CR) of high mobility photo excited carriers in high resistivity (> 1000 Ωcm) bulk FZ‐Si in a standard X‐band electron paramagnetic resonance setup. At 2.5 K and low microwave (MW) power a series of very narrow CR lines is seen allowing for a very precise evaluation of the cyclotron masses. In addition, we make use of the narrow line‐width to investigate electron heating caused by MW absorption. The minimum CR line‐width of 1.2 mT implies an electron mobility of more than 7 ⋅ 106 cm2/Vs. Modelling the line‐width we find that for a lattice temperature of 2 K, the electron temperature reaches 10 K at a MW power of 10 mW, and the temperature increases by 25 mK at 1 μW in spite of the fact that the sample is located in the MW cavity at the minimum of the electric field. At lower lattice temperature the electron heating is even bigger.