K. Shibahara, K. Egusa and K. Kamesaki: "Improvement in Sheet Resistance of Sb-Doped Ultra Shallow Junction by Dopant Pileup Reduction at the SiO2/Si"Extend. Adst. Of the 1999 Int. Conf. On Solid State Devices and Materials (SSDM'99). 514-515 (1999)
K. Shibahara, K. Egusa and K. Kamesaki: "Improvement in Sheet Resistance of Sb-Doped Ultra Shallow Junction by Dopant Pileup Reduction at the SiO2/Si"Extend. Adst. Of the 1999 Int. Conf. On Solid State Devices and Materials (SSDM'99). 514-515 (1999)
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K. Shibahara、K. Egusa 和 K. Kamesaki：“通过减少 SiO2/Si 处的掺杂剂堆积来改善掺锑超浅结的薄层电阻”扩展。
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