Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS
Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS
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DOI：
10.1016/j.tsf.2010.01.040
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发表时间：
2010-05-31
期刊：
影响因子：
2.1
通讯作者：
Vijayakumar, K. P.
中科院分区：
文献类型：
--
作者：
Sajeesh, T. H.;Warrier, Anita R.;Vijayakumar, K. P.
采用自动化学喷雾热解法（CSP）制备了SnS薄膜。在375摄氏度的衬底温度下沉积具有1.33 eV的直接带隙并且具有非常高的吸收系数（>10（5）/cm）的单相p型化学计量的SnS膜。衬底温度在确定的SnS膜的光电和结构特性的作用，建立和阴离子和阳离子前体溶液的浓度比进行了优化。还使用CSP技术在375摄氏度的相同衬底温度下制备了n型SnS样品，这有助于SnS同质结的顺序沉积。这两种类型的薄膜进行了全面的分析，使用X射线衍射，能量色散X射线分析，扫描电子显微镜，原子力显微镜，光学吸收和电学测量。还确定了生长锡的其它二元硫化物相如SnS 2、Sn 2S 3所需的沉积温度。(C)2010 Elsevier BV保留所有权利。
SnS thin films were prepared using automated chemical spray pyrolysis (CSP) technique. Single-phase, p-type, stoichiometric, SnS films with direct band gap of 1.33 eV and having very high absorption coefficient (>10(5)/cm) were deposited at substrate temperature of 375 degrees C. The role of substrate temperature in determining the optoelectronic and structural properties of SnS films was established and concentration ratios of anionic and cationic precursor solutions were optimized. n-type SnS samples were also prepared using CSP technique at the same substrate temperature of 375 degrees C, which facilitates sequential deposition of SnS homojunction. A comprehensive analysis of both types of films was done using x-ray diffraction, energy dispersive x-ray analysis, scanning electron microscopy, atomic force microscopy, optical absorption and electrical measurements. Deposition temperatures required for growth of other binary sulfide phases of tin such as SnS2, Sn2S3 were also determined. (C) 2010 Elsevier B.V. All rights reserved.