Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems
Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems
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DOI：
10.1088/0953-8984/20/38/384206
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发表时间：
2008-09
期刊：
影响因子：
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通讯作者：
T. Otsuji;Y. Meziani;T. Nishimura;T. Suemitsu;W. Knap;W. Knap;Eiichi Sano;Tanemasa Asano;V. V. Popov-V.
中科院分区：
文献类型：
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作者：
T. Otsuji;Y. Meziani;T. Nishimura;T. Suemitsu;W. Knap;W. Knap;Eiichi Sano;Tanemasa Asano;V. V. Popov-V.
本文综述了2D等离子体共振太赫兹辐射源的最新进展。该结构是基于高电子迁移率晶体管和具有双叉指栅。双光栅门可以交替地调制2D电子密度以沿着通道沿着周期性地分布等离子体腔，充当天线。该器件可以发射宽带太赫兹辐射，即使在室温下从自振荡二维等离子体激元在直流偏置条件下。当器件受到激光照射时，光生载流子激发等离子体振荡，导致发射增强。第一个样品是用标准的GaAs基异质结材料系统制备的，实现了室温太赫兹发射。第二个样品是在双层HEMT结构中制造的，其中光栅栅极金属层被半导体上层2D电子层取代，导致发射增强一个数量级。
This paper reviews recent advances in our original 2D-plasmon-resonant terahertz emitters. The structure is based on a high-electron-mobility transistor and featured with doubly interdigitated grating gates. The dual grating gates can alternately modulate the 2D electron densities to periodically distribute the plasmonic cavities along the channel, acting as an antenna. The device can emit broadband terahertz radiation even at room temperature from self-oscillating 2D plasmons under the DC-biased conditions. When the device is subjected to laser illumination, photo-generated carriers stimulate the plasma oscillation, resulting in enhancement of the emission. The first sample was fabricated with standard GaAs-based heterostructure material systems, achieving room temperature terahertz emission. The second sample was fabricated in a double-decked HEMT structure in which the grating gate metal layer was replaced with the semiconducting upper-deck 2D electron layer, resulting in enhancement of emission by one order of magnitude.