Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves
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通过透射电子衍射和 X 射线摇摆曲线观察带 W 掩模和 SiO2 掩模的外延横向生长 GaN 的晶体取向波动
DOI：
10.1143/jjap.38.l1299
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发表时间：
1999
影响因子：
1.5
通讯作者：
N. Sawaki
中科院分区：
文献类型：
--
作者：
Y. Honda;Y. Iyechika;T. Maeda;H. Miyake;K. Hiramatsu;H. Sone;N. Sawaki
通过选区透射电子衍射（TED）和X射线摇摆曲线（XRC）比较了用钨（W）掩模和用SiO2掩模外延横向过生长（ELO）GaN的晶体取向的波动。在SiO2掩模上的（0004）反射的XRC显示出三个峰，并且通过TED证实其源自不同c轴取向的畴。另一方面，对于具有W掩模的a-GaN，未观察到c轴的波动。这些结果表明，使用W掩模的x-GaN的结晶质量优于使用SiO2掩模的x-GaN。
Fluctuation of the crystal orientation of epitaxial-lateral-overgrown (ELO) GaN with a tungsten (W) mask is compared to that with a SiO2 mask by means of selected-area transmission electron diffraction (TED) and X-ray rocking curves (XRCs). XRCs of (0004) reflection exhibited three peaks for ELO-GaN on a SiO2 mask, and were confirmed to originate from domains of different c-axis orientation by TED. On the other hand, fluctuation of the c-axis was not observed for ELO-GaN with a W mask. These results indicate that the crystalline quality of ELO-GaN with a W mask is better than that with a SiO2 mask.