Electronic and optical properties of quantum dots and wires
Electronic and optical properties of quantum dots and wires
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量子点和量子线的电子和光学特性
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
O. Stier
中科院分区：
文献类型：
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作者：
O. Stier
并且是，以及它的任何部分，受版权保护。所有权利，包括翻译，重印，复制和发行与出版公司。未经出版公司书面许可，不得以任何方式复制、电子处理或分发本作品的任何部分。本文件由出版公司提供。它与印刷版相同，不得更改。这项工作的一部分已发表在Electronic and optical properties of strained quantum dots modeled by eight-band k·p theory，Inter-and intraband transitions in strained quantum dots modeled in eight-band k·p theory，Modeling of strained quantum wires using eight-band k·p theory，Eight-band k·p analysis of pseudomorphic quantum wires：InGaAs/AlGaAs的情况，劈裂边过度生长应变诱导量子线的电子结构，量子线光谱中应变和量子限制效应的分离，InGaAs/AlGaAs V型槽量子线光致发光激发谱中应变和限制效应的分离，
and is, as well as any part of it, protected by copyright. All rights, including translation, reprinting, reproduction, and distribution are with the publishing company. No part of this work may be reproduced in whatsoever manner, electronically processed, or distributed without written permission of the publishing company. This file appears by courtesy of the publishing company. It is identical with the print edition, and must not be changed. Parts of this work have been published in Electronic and optical properties of strained quantum dots modeled by eight-band k·p theory, Inter-and intraband transitions in strained quantum dots modeled in eight-band k·p theory, Modeling of strained quantum wires using eight-band k·p theory, Eight-band k·p analysis of pseudomorphic quantum wires: The InGaAs/AlGaAs case, Electronic structure of cleaved-edge-overgrowth strain-induced quantum wires, Separation of strain and quantum-confinement effects in the optical spectra of quantum wires, Separation of strain and confinement effects in the photoluminescence excitation spectra of InGaAs/AlGaAs V-groove quantum wires,