Fabrication of semiconductor nanostructures on the outer surfaces of polyacrylonitrile nanofibers by in-situ electrospinning
Fabrication of semiconductor nanostructures on the outer surfaces of polyacrylonitrile nanofibers by in-situ electrospinning
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DOI：
10.1016/j.matlet.2006.09.058
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发表时间：
2007-05-01
影响因子：
3
通讯作者：
Wang, Ce
中科院分区：
文献类型：
--
作者：
Dong, Fengxia;Li, Zhenyu;Wang, Ce
采用原位电纺法在聚丙烯腈(PAN)纳米纤维外表面直接制备半导体(Ag2S或Cu2S)纳米结构。以PAN/金属盐复合纤维为先驱体，经紫外光照射、光还原和H_2S气体处理后，在PAN纳米纤维的外表面形成Ag2S或Cu2S纳米结构。聚合物与金属离子之间的相互作用被认为是决定基于电纺纳米纤维的金属离子位置的主要因素。用透射电子显微镜和傅里叶变换红外光谱对产物进行了表征。(C)2006爱思唯尔B.V.保留所有权利。
In this paper, in-situ electrospinning method was presented to directly fabricate semiconductor (Ag2S or Cu2S) nanostructures on the outer surfaces of polyacrylonitrile (PAN) nanofibers. PAN/metallic salt composite fibers were electrospun firstly as precursors, after UV irradiation photoreduction and the treatment of H2S gas, Ag2S or Cu2S nanostructures can be obtained on the outer surface of PAN nanofibers. The interactions between the polymer and metallic ions are believed to be the main factor in determining the position of metallic ions based on the electrospun nanofibers. Transmission electron microscopy (TEM) and Fourier transform infrared (FTIR) are used to characterize the products. (c) 2006 Elsevier B.V. All rights reserved.