Density-of-state effective mass and non-parabolicity parameter of impurity doped ZnO thin films
Density-of-state effective mass and non-parabolicity parameter of impurity doped ZnO thin films
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DOI：
10.1088/0022-3727/41/19/195409
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发表时间：
2008-10-07
影响因子：
3.4
通讯作者：
Seong, T-Y
中科院分区：
文献类型：
--
作者：
Kim, W. M.;Kim, I. H.;Seong, T-Y
采用四系数法测量了掺杂多晶ZnO薄膜的态密度有效质量。通过应用一阶非抛物型近似，成功地分析了极化子有效质量和导带最小值处的裸带质量以及相应的非抛物型参数。确定的垂直极化子质量为 0.29 me，导带最小值处的裸带质量为 0.247 me，与之前针对 ZnO 单晶获得的结果非常吻合。由于多晶ZnO薄膜中Frohlich耦合常数相对于裸带质量的增函数，极化子有效质量的非抛物线参数为0.457 eV(-1)，大于裸带质量的0.33 eV(-1)。
The density-of-state effective masses of impurity doped polycrystalline ZnO thin films were measured by the method of four coefficients technique. By applying the first-order non-parabolicity approximation, the polaron effective mass and the bare band mass at the conduction band minimum, together with the corresponding non-parabolicity parameters, were analysed successfully. The determined perpendicular polaron mass of 0.29 me and the bare band mass of 0.247 me at the conduction band minimum corresponded very well to the previous results obtained for ZnO single crystals. The non-parabolicity parameter of 0.457 eV(-1) derived for the polaron effective mass was larger than 0.33 eV(-1) which was obtained for the bare band mass due to the increasing function of the Frohlich coupling constant with respect to the bare band mass in polycrystalline ZnO films.