A continuous, analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region
A continuous, analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region
复制标题
掺杂对称双栅 MOSFET 从累积区到强反转区的连续、解析沟道电位解决方案
作者：
Zhang Jian;Zhang Lining;He Jin;Liu Feng;Zhou Xingye;Shi Min
