Revealing the role of oxygen vacancies on the phase transition of VO(2) film from the optical-constant measurements.
Revealing the role of oxygen vacancies on the phase transition of VO(2) film from the optical-constant measurements.
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从光学常数测量揭示氧空位对 VO2 薄膜相变的作用
DOI：
10.1039/c8ra03292k
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发表时间：
2018-05-22
期刊：
影响因子：
3.9
通讯作者：
Zou, Chongwen
中科院分区：
文献类型：
--
作者：
Fan, Lele;Wang, Xiangqi;Wang, Feng;Zhang, Qinfang;Zhu, Lei;Meng, Qiangqiang;Wang, Baolin;Zhang, Zengming;Zou, Chongwen
二氧化钒（VO 2）材料在340 K的临界温度下表现出明显的金属-绝缘体转变（MIT）。与其他相关氧化物类似，VO 2的MIT特性对氧空位等晶体缺陷非常敏感。在本研究中，我们研究了氧空位相关的VO 2晶体薄膜的相变行为，并从光学常数测量系统地研究了氧空位的影响。结果表明，氧空位不仅改变了V3 d-O2 p杂化轨道上的电子占据率，而且改变了电子-电子相关能和相应的带隙，从而调制了MIT行为，降低了临界温度.我们的工作不仅提供了一种简单的方法来调节VO 2晶体薄膜的MIT行为，而且还揭示了氧空位对电子带间跃迁的影响以及驱动这种MIT过程的电子相关性。利用光学电导谱研究了氧空位在VO 2金属-绝缘体转变过程中的作用。
Vanadium dioxide (VO2) material shows a distinct metal–insulator transition (MIT) at the critical temperature of ∼340 K. Similar to other correlated oxides, the MIT properties of VO2 is always sensitive to those crystal defects such as oxygen vacancies. In this study, we investigated the oxygen vacancies related phase transition behavior of VO2 crystal film and systematically examined the effect of oxygen vacancies from the optical constant measurements. The results indicated that the oxygen vacancies changed not only the electron occupancy on V 3d–O 2p hybrid-orbitals, but also the electron–electron correlation energy and the related band gap, which modulated the MIT behavior and decreased the critical temperature resultantly. Our work not only provided a facile way to modulate the MIT behavior of VO2 crystal film, but also revealed the effects of the oxygen vacancies on the electronic inter-band transitions as well as the electronic correlations in driving this MIT process. Optical conductivity spectroscopy was performed to reveal the role of oxygen vacancies during VO2 metal–insulator transition.
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影响因子：
56.9
作者：
Jeong, Jaewoo;Aetukuri, Nagaphani;Parkin, Stuart S. P.
通讯作者：
Parkin, Stuart S. P.
影响因子：
2.1
作者：
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影响因子：
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作者：
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通讯作者：
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影响因子：
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作者：
Qazilbash, M. M.;Brehm, M.;Basov, D. N.
通讯作者：
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影响因子：
29.4
作者：
Gao, Chao;Meng, Qiangqiang;Tang, Zhiyong
通讯作者：
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