High‐quality GaAs on sawtooth‐patterned Si substrates
High‐quality GaAs on sawtooth‐patterned Si substrates
复制标题
锯齿形硅衬底上的高质量砷化镓
DOI：
10.1063/1.106034
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发表时间：
1991
影响因子：
4
通讯作者：
Henry I. Smith
中科院分区：
文献类型：
--
作者：
K. Ismail;F. Legoues;N. Karam;J. M. Carter;Henry I. Smith
我们报道了一种在低密度穿透位错的Si衬底上生长GaAs的新技术。该工艺涉及使用全息光刻和湿化学蚀刻的组合在（100）Si上图案化200 nm周期锯齿光栅。通过金属有机化学气相沉积在这样的衬底上生长的GaAs层表现出螺纹失配位错的密度显着降低，即使当生长的层是薄的。孪晶和堆垛层错也通过原位热循环生长或非原位快速热退火而显著减少。
We report a novel technique for growing GaAs on Si substrates with a low density of threading dislocations. The process involves patterning a 200 nm period sawtooth grating on (100) Si using a combination of holographic lithography and wet chemical etching. The GaAs layers grown by metalorganic chemical vapor deposition on such substrates exhibit a dramatic reduction in the density of threading misfit dislocations, even when the grown layers are thin. Twins and stacking faults are also reduced dramatically by either in situ thermal‐cycle growth or ex situ rapid thermal annealing.