Thermally-tailoring dielectric "genes" in graphene-based heterostructure to manipulate electromagnetic response
Thermally-tailoring dielectric "genes" in graphene-based heterostructure to manipulate electromagnetic response
复制标题
基于石墨烯的异质结构中的热剪裁介电“基因”来操纵电磁响应
DOI：
10.1016/j.carbon.2021.07.099
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发表时间：
2021
期刊：
影响因子：
10.9
通讯作者：
Cao Mao-Sheng
中科院分区：
文献类型：
--
作者：
Wang Xi-Xi;Zhang Min;Shu Jin-Cheng;Wen Bo;Cao Wen-Qiang;Cao Mao-Sheng
第五代（5G）既是挑战，也是机遇。在这样一个关键时刻，深入了解操纵电磁（EM）响应的本质对于指导科学研究和技术开发至关重要。在此，基于先前工作的石墨烯异质结构的介电“基因”在实验和理论上得到了进一步证明，即使在高温下也赋予了操纵电磁响应的无限可能性。成功区分了介电“基因”类别，主要包括传导网络、本征缺陷、杂质缺陷和界面，并详细揭示了它们的温度演化。通过“基因”的多尺度剪裁，在T= 423 K时最大反射损耗（RL）提高至-58.1 dB，匹配厚度大幅减小至1.16 mm，电磁干扰屏蔽性能显现，有效吸收效率（Aeff）高于70%。这些介电“基因”的发现将为即将到来的5G时代的智能材料设计开辟意想不到的视野，为下一代智能设备的推广以及环境治理和保护提供巨大的推动力。
Fifth-generation (5G) is as much a challenge as an opportunity. Getting insight into the nature of manipulating electromagnetic (EM) response is greatly imperative to guide the scientific research and technological exploitation at such a critical time. Herein, the dielectric “genes” of graphene-based heterostructure is further demonstrated experimentally and theoretically based on previous work, endowing unlimited possibility to manipulate EM response, even at elevated temperature. The dielectric “genes” categories are successfully discriminated, mainly including conduction network, intrinsic defects, impurity defects, and interfaces, and their temperature evolution is revealed in detail. By multiscale tailoring of “genes”, the maximal reflection loss (RL) is raised up to −58.1 dB atT= 423 K with a greatly reduced matching thickness of 1.16 mm, and the EM interference shielding performance emerges with an effective absorption efficiency (Aeff) higher than 70%. These findings of dielectric “genes” will open up an unexpected horizon for smart material design in the coming 5G age, providing a great boost for promoting the next-generation smart devices, as well as environmental government and protection.