Investigation of the spatial resolution of the light-addressable potentiometric sensor
Investigation of the spatial resolution of the light-addressable potentiometric sensor
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DOI：
10.1016/s0924-4247(00)00455-6
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发表时间：
2000-11-15
影响因子：
4.6
通讯作者：
Gaub, HE
中科院分区：
文献类型：
--
作者：
George, M;Parak, WJ;Gaub, HE
对光寻址电位传感器的空间分辨率进行了理论和实验研究。作为理论分析，求解了半导体中少数载流子的扩散方程。结果表明，通过减薄半导体晶片，LAPS的空间分辨率不再受体少数载流子扩散长度的限制。因此，在微米范围内的空间分辨率应该是可能的。为了进行实验分析，测量了平行于传感器表面的光生载流子的有效扩散长度。结果表明，通过增加掺杂浓度和减薄半导体衬底，可以获得约15微米的空间分辨率。(C)2000 Elsevier Science B.V.保留所有权利。
The spatial resolution of the light-addressable potentiometric sensor (LAPS) is investigated both theoretically and experimentally. For a theoretical analysis, the diffusion equation for minority charge carriers in the semiconductor was solved. The results suggest that by thinning the semiconductor wafer, the spatial resolution of the LAPS is no longer limited by thr bulk minority charge carrier diffusion length. Spatial resolution in the micrometer range should thus be possible. For an experimental analysis, the effective diffusion length of light-generated charge carriers parallel to the sensor surface was measured. The results show that by increasing the doping density and by thinning the semiconductor substrate, spatial resolution of about 15 mum is obtained. (C) 2000 Elsevier Science B.V. All rights reserved.