Controlling the growth of epitaxial graphene on metalized diamond (111) surface
Controlling the growth of epitaxial graphene on metalized diamond (111) surface
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DOI：
10.1063/1.4935073
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发表时间：
2015-11-02
影响因子：
4
通讯作者：
Evans, D. A.
中科院分区：
文献类型：
--
作者：
Cooil, S. P.;Wells, J. W.;Evans, D. A.
用超薄的Fe膜催化降低了将Sp(3)转化为Sp(2)碳所需的反应温度，证明了金刚石(111)表面的二维转化为石墨烯。形成了一种外延体系，它涉及到碳在Fe/真空界面上的再结晶，并使单层和多层石墨烯薄膜的生长得到控制。为了研究单层和多层石墨烯生长的初始阶段，在光电子显微镜和低能电子显微镜上对该系统进行了实时监测。研究发现，最初的石墨烯生长发生在低至500℃的温度，而需要将温度提高到560℃才能产生高结构质量的多层石墨烯。用角度分辨光电子能谱研究了生长材料的电子性质，观察到了类石墨烯的能量动量弥散。第一层的Dirac点位于费米能级以下2.5 eV，表明由于衬底相互作用，石墨烯为n型掺杂，而第二层的Dirac点接近费米能级。(C)2015 AIP出版有限责任公司。
The 2-dimensional transformation of the diamond (111) surface to graphene has been demonstrated using ultrathin Fe films that catalytically reduce the reaction temperature needed for the conversion of sp(3) to sp(2) carbon. An epitaxial system is formed, which involves the re-crystallization of carbon at the Fe/vacuum interface and that enables the controlled growth of monolayer and multilayer graphene films. In order to study the initial stages of single and multilayer graphene growth, real time monitoring of the system was preformed within a photoemission and low energy electron microscope. It was found that the initial graphene growth occurred at temperatures as low as 500 degrees C, whilst increasing the temperature to 560 degrees C was required to produce multi-layer graphene of high structural quality. Angle resolved photoelectron spectroscopy was used to study the electronic properties of the grown material, where a graphene-like energy momentum dispersion was observed. The Dirac point for the first layer is located at 2.5 eV below the Fermi level, indicating an n-type doping of the graphene due to substrate interactions, while that of the second graphene layer lies close to the Fermi level. (C) 2015 AIP Publishing LLC.