Electrochemical Investigation of the Effect of Hydrogen Peroxide Concentration on Platinum-Particle-Assisted Etching of p-Type Silicon in a Hydrofluoric Acid Solution
Electrochemical Investigation of the Effect of Hydrogen Peroxide Concentration on Platinum-Particle-Assisted Etching of p-Type Silicon in a Hydrofluoric Acid Solution
复制标题
氢氟酸溶液中过氧化氢浓度对 p 型硅铂粒子辅助蚀刻影响的电化学研究
DOI：
10.1149/1945-7111/ac330e
复制
发表时间：
2021
影响因子：
3.9
通讯作者：
Yae Shinji
中科院分区：
文献类型：
--
作者：
Matsumoto Ayumu;Furukawa Kyohei;Majima Shun;Iwamoto Keishi;Yae Shinji
金属辅助刻蚀（metal-assisted chemical etching）作为一种低成本、多用途的半导体微细加工技术，越来越受到人们的关注。在铂（Pt）颗粒辅助的硅（Si）蚀刻中，可以产生直的大孔和中孔层的复合结构，但是该结构形成的机制仍然有待讨论。我们采用电化学的方法来研究的复合结构形成的Pt辅助蚀刻。测量了镀铂硅和裸硅在含有不同浓度过氧化氢（H2 O2）的氢氟酸（HF）溶液中的极化曲线。Pt辅助腐蚀过程中的开路电位比裸Si的开路电位正，并且随着H2 O2浓度的增加，开路电位向正方向移动，这是由于H2 O2还原反应增强的结果。对于结构观察，大孔深度和介孔层厚度都随着H2 O2浓度的增加而增加，但它们之间的比例发生变化。我们讨论了结构变化的偏振特性的基础上。介孔层的形成可以用正电位下的空穴消耗来解释，正电位由混合电位理论确定。
Metal-assisted etching (metal-assisted chemical etching) has attracted increasing attention as a low-cost and versatile microfabrication technique of semiconductors. In platinum (Pt)-particle-assisted etching of silicon (Si), a composite structure of straight macropores and a mesoporous layer can be produced, but the mechanism of the structure formation is still open to discussion. We employed an electrochemical approach to investigate the composite structure formation by the Pt-assisted etching. Polarization curves of Pt-deposited Si and bare Si were measured in hydrofluoric acid (HF) solutions containing different concentrations of hydrogen peroxide (H 2 O 2). The open circuit potential during the Pt-assisted etching was more positive than that of the bare Si and it shifted in the positive direction with increasing the H 2 O 2 concentration as a consequence of the enhancement of the H 2 O 2 reduction reaction. For the structure observation, both the macropore depth and the mesoporous layer thickness increased with increasing the H 2 O 2 concentration, while the ratio between them changed. We discussed the structure change on the basis of the polarization characteristics. The mesoporous layer formation can be explained by the hole consumption at the Si surface under the positive potential which is determined by mixed potential theory.