Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets
Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets
复制标题
DOI：
10.1021/acs.nanolett.5b04260
复制
发表时间：
2016-01-01
期刊：
影响因子：
10.8
通讯作者：
Hu, Yun Hang
中科院分区：
文献类型：
--
作者：
Cheng, Peifu;Sun, Kai;Hu, Yun Hang
忆阻器是很久以前就被预言的（Chua, L. O. IEEE Trans. Circuit Theoly 1971, 18, 507），最近才被发明（Strukov, D. B.；等人 Nature 2008, 453, 80）。忆阻器的推出有望开启非易失性存储器存储、神经形态计算、数字逻辑和模拟电路的新时代。此外，忆阻现象和单层MoS2晶体管也取得了多项突破（Sangwan, V. K.; et al. Nat. Nanotechnol. 2015, 10, 403. van der Zande, A. M.; et al. Nat. Mater. 2013, 12, 554. Liu, H.; et al. ACS Nano 2014, 8, 1031.贝索诺夫， A.A.；等人。纳特。马特。 2015, 14, 199. 袁杰;等人。纳特。纳米技术。 2015, 10, 389）。在此，我们证明了块状 MoS2 的 2H 相具有欧姆性。特征，而剥离的 MoS2 的 1T 相，纳米片由于电压依赖性电阻变化而表现出独特的忆阻行为。此外，通过将两个不对称开关反串联组合，利用1T相MoS2纳米片成功制备了具有奇对称IV特性的理想奇对称忆阻器。
Memristor, which had been predicted a long time ago (Chua, L. O. IEEE Trans. Circuit Theoly 1971, 18, 507), was recently invented (Strukov, D. B.; et al. Nature 2008, 453, 80). The introduction of a memristor is expected to open a new era for nonvolatile memory storage, neuromorphic computing, digital logic, and analog circuit. Furthermore, several breakthroughs were made for memristive phenomena and transistors with single-layer MoS2 (Sangwan, V. K.; et al. Nat. Nanotechnol. 2015, 10, 403. van der Zande, A. M.; et al. Nat. Mater. 2013, 12, 554. Liu, H.; et al. ACS Nano 2014, 8, 1031. Bessonov, A. A.; et al. Nat. Mater. 2015, 14, 199. Yuan, J.; et al. Nat. Nanotechnol. 2015, 10, 389). Herein, we demonstrate that 2H phase of bulk MoS2, possessed an ohmic. feature, whereas 1T phase of exfoliated MoS2, nanosheets exhibited a unique memristive behavior due to voltage-dependent resistance change. Furthermore, an ideal odd-symmetric memristor with odd-symmetric I V characteristics was successfully fabricated by the 1T phase MoS2 nanosheets via combining two asymmetric switches antiserially.