A Four-Step Method for De-Embedding Gigahertz
A Four-Step Method for De-Embedding Gigahertz
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DOI：
10.1109/16.830987
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发表时间：
2000-04
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影响因子：
--
通讯作者：
T. Kolding
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文献类型：
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作者：
T. Kolding
本文提出了一种在吉赫兹范围内进行片上器件精确测量的去嵌入方法。该方法解决了衬底耦合和接触效应的问题，因此适合于使用有损技术(如CMOS)进行测量。该方法假定使用众所周知的技术和阻抗衬底执行探头-尖端双端口校准。通过采用对测试夹具的物理解释，该方法缓解了常见的去嵌入过程中的一些已知问题。提出了四个不同的数学步骤来去嵌入测试固定的寄生，以给出被测器件的准确测量。通过引入一个简单的夹具标准缺陷补偿系数，该方法可以高精度地测量大型设备。通过12 GHz的测量，验证了该方法的适用性。
In this paper, a de-embedding method is proposed for conducting accurate on-wafer device measurements in the gi- gahertz range. The method addresses issues of substrate coupling and contact effects and is therefore suitable for measurements with lossy technologies such as CMOS. The method assumes a probe-tip two-port calibration performed with well-known techniques and impedance substrates. By employing a physical interpretation of the test-fixture, the method alleviates a number of known prob- lems with common de-embedding procedures. Four distinct math- ematical steps are suggested to de-embed parasitics for the test-fix- ture to give an accurate measurement of the device under test. By introducing a simple compensation factor for in-fixture stan- dard imperfections, the proposed method allows large devices to be measured with high accuracy. The applicability of the method is demonstrated with measurements up to 12 GHz.