Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM
Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM
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DOI：
10.1109/tns.2008.2005499
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发表时间：
2008-12
影响因子：
1.8
通讯作者：
D. Heidel;Paul W. Marshall;Ken LaBel;J. Schwank;K. Rodbell;M. Hakey;M. Berg;Paul E. Dodd;M. Friendlich;Anthony D. Phan;C. Seidleck;M. R. Shaneyfelt;M. Xapsos
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文献类型：
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作者：
D. Heidel;Paul W. Marshall;Ken LaBel;J. Schwank;K. Rodbell;M. Hakey;M. Berg;Paul E. Dodd;M. Friendlich;Anthony D. Phan;C. Seidleck;M. R. Shaneyfelt;M. Xapsos
介绍了在65nm绝缘体上硅（SOI） SRAM上质子诱导单事件扰动（SEU）的实验结果。与前几代技术制造的SRAM相比，65 nm SRAM的低能质子SEU结果非常不同。具体来说，当质子能量降低到1 MeV时，没有观察到扰动阈值；在1 MeV以下，扰动截面急剧上升。低于1兆电子伏的增加是由于低能质子的直接电离引起的扰动。讨论了低能质子扰动对65nm sram空间应用的影响；并对辐射保障试验的意义进行了讨论。
Experimental results are presented on proton induced single-event-upsets (SEU) on a 65 nm silicon-on-insulator (SOI) SRAM. The low energy proton SEU results are very different for the 65 nm SRAM as compared with SRAMs fabricated in previous technology generations. Specifically, no upset threshold is observed as the proton energy is decreased down to 1 MeV; and a sharp rise in the upset cross-section is observed below 1 MeV. The increase below 1 MeV is attributed to upsets caused by direct ionization from the low energy protons. The implications of the low energy proton upsets are discussed for space applications of 65 nm SRAMs; and the implications for radiation assurance testing are also discussed.