Oxygen-defect-induced magnetism to 880 K in semiconducting anatase TiO2−δ films
Oxygen-defect-induced magnetism to 880 K in semiconducting anatase TiO2−δ films
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DOI：
10.1088/0953-8984/18/27/l01
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发表时间：
2006-07
期刊：
影响因子：
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通讯作者：
S. Yoon;Yajie Chen;A. Yang;T. Goodrich;X. Zuo;D. Arena;K. Ziemer;C. Vittoria;V. Harris
中科院分区：
文献类型：
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作者：
S. Yoon;Yajie Chen;A. Yang;T. Goodrich;X. Zuo;D. Arena;K. Ziemer;C. Vittoria;V. Harris
我们展示了一种半导体材料，Ti02−δ，在没有磁性离子的情况下，其铁磁性高达880K。这些薄膜的磁性源于薄膜-衬底界面的负离子缺陷的受控引入以及在缺氧气氛下的加工。室温载流子为n型，n∼为3×10 17 cm−3，自旋密度为∼10 2 1 cm−3。磁标度与电导率有关，表明双交换作用是活跃的。这代表了用于自旋电子器件的磁性半导体材料的设计和改进的新方法。
We demonstrate a semiconducting material, TiO2−δ, with ferromagnetism up to 880 K, without the introduction of magnetic ions. The magnetism in these films stems from the controlled introduction of anion defects from both the film–substrate interface as well as processing under an oxygen-deficient atmosphere. The room-temperature carriers are n-type with n∼3 × 1017 cm−3. The density of spins is ∼1021 cm−3. Magnetism scales with conductivity, suggesting that a double exchange interaction is active. This represents a new approach in the design and refinement of magnetic semiconductor materials for spintronics device applications.