FABRICATION AND PROPERTIES OF EPITAXIAL FERROELECTRIC HETEROSTRUCTURES WITH (SRRUO3) ISOTROPIC METALLIC OXIDE ELECTRODES
FABRICATION AND PROPERTIES OF EPITAXIAL FERROELECTRIC HETEROSTRUCTURES WITH (SRRUO3) ISOTROPIC METALLIC OXIDE ELECTRODES
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DOI：
10.1063/1.110436
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发表时间：
1993-11-01
影响因子：
4
通讯作者：
FORK, DK
中科院分区：
文献类型：
--
作者：
EOM, CB;VANDOVER, RB;FORK, DK
在（100）SrTiO_3和（100）Si衬底上用各向同性金属氧化物电极和氧化钇稳定的氧化锆缓冲层制备了SrRuO_3/Pb（Zr_（0.52）Ti_（0.48））O_3/SrRuO_3异质结。该结构已原位生长的90度离轴溅射，这使得均匀的化学计量膜的生长在大面积上具有良好的阶梯覆盖。X射线衍射，卢瑟福背散射光谱，和横截面透射电子显微镜显示高结晶质量和连贯的接口。与金属电致发光材料相比，它们表现出上级的疲劳特性，在10（10）次循环中几乎没有退化，剩余极化很大。
Epitaxial ferroelectric SrRuO3/Pb(Zr0.52Ti0.48)O3/SrRuO3 heterostructures have been fabricated employing isotropic metallic oxide electrodes on (100) SrTiO3 and (100) Si with an yttria stabilized zirconia buffer layer. The structures have been grown in situ by 90-degrees off-axis sputtering, which allows the growth of uniform stoichiometric films over large areas with excellent step coverage. X-ray diffraction, Rutherford backscattering spectroscopy, and cross-sectional transmission electron microscopy reveal high crystalline quality and coherent interfaces. They exhibit superior fatigue characteristics over those made with metal el showing little degradation over 10(10) cycles, with a large remnant polarization.