Determination of the intrinsic anomalous hall effect of SrRuO3
Determination of the intrinsic anomalous hall effect of SrRuO3
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DOI：
10.1103/physrevb.72.064436
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发表时间：
2005-08
影响因子：
3.7
通讯作者：
R. Mathieu;C. Jung;H. Yamada;A. Asamitsu;M. Kawasaki;Y. Tokura
中科院分区：
文献类型：
--
作者：
R. Mathieu;C. Jung;H. Yamada;A. Asamitsu;M. Kawasaki;Y. Tokura
本文研究了不同晶格参数的SrRuO_3 ~$外延薄膜的反常霍尔效应，并根据Berry相模型对反常霍尔效应进行了分析。在SrTiO 3 $衬底上直接沉积SrRuO 3 $薄膜，或使用中间缓冲层，以精细地控制外延应变。不同薄膜的AHE表现出固有的特征，如霍尔电阻率随温度的符号变化，即使对于小厚度的SrRuO_3。然而，反常的霍尔电导率从其固有值大大降低，因为当释放外延应变时，载流子散射增加。我们认为，具有低剩余电阻率的全应变SrRuO_3 $薄膜的AHE代表了SrRuO_3 $的本征AHE。
The anomalous Hall effect (AHE) of epitaxial SrRuO$_3$ films with varying lattice parameters is investigated, and analyzed according to the Berry-phase scenario. SrRuO$_3$ thin films were deposited on SrTiO$_3$ substrates directly, or using intermediate buffer layers, in order to finely control the epitaxial strain. The AHE of the different films exhibits intrinsic features such as the sign change of the Hall resistivity with the temperature, even for small thicknesses of SrRuO$_3$. However, the anomalous Hall conductivity is greatly reduced from its intrinsic value as the carrier scattering is increased when the epitaxial strain is released. We argue that the AHE of fully strained SrRuO$_3$ film with low residual resistivity represents the intrinsic AHE of SrRuO$_3$.