High-speed observation of pulse energy and pulse width dependences of damage generation in SiC during ultrashort pulse laser drilling
High-speed observation of pulse energy and pulse width dependences of damage generation in SiC during ultrashort pulse laser drilling
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DOI：
10.1007/s00339-020-04018-y
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发表时间：
2020-10-14
影响因子：
2.7
通讯作者：
Sugita, Naohiko
中科院分区：
文献类型：
--
作者：
Hattori, Junya;Ito, Yusuke;Sugita, Naohiko
超短脉冲激光加工是一种很有潜力的碳化硅（SiC）微细加工方法。然而，使用该方法难以精确地加工SiC，因为在加工区域周围产生许多损伤。尽管各种研究已经调查了最佳加工条件，但是加工期间条件对高速现象的影响以及这些现象对加工形状和产生的损伤的影响在很大程度上仍然不清楚。在这项研究中，我们结合联合收割机的高速相机与超短激光探测脉冲可视化的现象驱动的每个脉冲照射和调查的脉冲能量（50，100，200 μ J）和脉冲宽度（180 fs，1 ps，10 ps）的依赖关系。结果表明，当脉冲能量较大时，应力波在SiC内部传播的强度较大，造成的损伤也较大。此外，我们发现，对于10 ps的脉冲宽度，热损伤发生在空穴入口附近。阐明了加工条件对应力波传播、损伤产生和加工形状的影响，将为开发SiC的精密加工方法做出重要贡献。
Ultrashort pulse laser processing is a potential method for microfabricating silicon carbide (SiC). However, it is difficult to precisely process SiC using this method because numerous damages are generated around the processed region. Although various studies have investigated the optimal processing conditions, the effects of the conditions on the high-speed phenomena during processing and the effects of these phenomena on the processed shapes and generated damages remain largely unclear. In this study, we combine a high-speed camera with ultrashort laser probe pulses to visualize the phenomena driven by each pulse irradiation and investigate the pulse energy (50, 100, 200 mu J) and pulse width (180 fs, 1 ps, 10 ps) dependencies. The results clarify that for larger pulse energy, stronger stress waves propagate inside SiC, causing greater damages. In addition, we find that for a pulse width of 10 ps, thermal damage occurs near the hole entrance. The clarified effects of the processing conditions on the stress wave propagation, damage generation, and processed shapes will contribute significantly to developing methods for precision processing of SiC.