Detection of SO2 at the ppm Level with Localized Surface Plasmon Resonance (LSPR) Sensing

Detection of SO2 at the ppm Level with Localized Surface Plasmon Resonance (LSPR) Sensing
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DOI:
10.1007/s11468-019-01099-1
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发表时间:
2019-12
期刊:
影响因子:
3
通讯作者:
Yuki Takimoto;A. Monkawa;K. Nagata;Masahiro Kobayashi;M. Kinoshita;T. Gessei;Toshiya Mori;H. Kagi
Yuki Takimoto;A. Monkawa;K. Nagata;Masahiro Kobayashi;M. Kinoshita;T. Gessei;Toshiya Mori;H. Kagi
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
Yuki Takimoto;A. Monkawa;K. Nagata;Masahiro Kobayashi;M. Kinoshita;T. Gessei;Toshiya Mori;H. Kagi

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SO2是工业和自然过程排放的大气环境中的代表性有毒气体,因此SO2的检测和监测非常重要。局域表面等离子体共振(LSPR)传感是一种很有前途的方法,以开发一个强大的和低成本的传感器的气体物种。然而,使用传统的LSPR传感,包括SO2在内的无机气体在ppm水平下是不可检测的。在这项研究中,我们开发了Au纳米图案芯片涂有多孔二氧化硅,这使得检测SO2气体在ppm水平使用LSPR传感系统。Au纳米图案的优化使用有限差分时域模拟和石英衬底上使用电子束光刻制造。Au纳米图案化芯片通过溶胶-凝胶法涂覆有多孔二氧化硅,其能够检测20 ppm的SO2。多孔二氧化硅涂层芯片的灵敏度比未涂层芯片的灵敏度高4倍。采用化学气相沉积法用3-氨丙基三甲氧基硅烷(APTMS)对多孔二氧化硅层进行改性,进一步提高了芯片对SO2气体的灵敏度,比未改性多孔二氧化硅涂层芯片的灵敏度提高了13倍。通过X射线光电子能谱的深度分布表明,APTMS均匀地引入到多孔二氧化硅层。这项研究表明,Au纳米图案芯片上的多孔二氧化硅涂层及其额外的官能团修饰对于开发低成本和灵敏的无机气体传感器(如SO2)具有潜在的重要意义。
Detection and monitoring of SO2is important because it is a representative toxic gas in the atmospheric environment that is emitted from industrial and natural processes. Localized surface plasmon resonance (LSPR) sensing is a promising method to develop a robust and low-cost sensor for gaseous species. However, with conventional LSPR sensing, inorganic gases including SO2are not detectable at the ppm level. In this study, we developed Au-nanopatterned chips coated with porous silica, which enabled detection of SO2gas at ppm levels using the LSPR sensing system. The Au nanopattern was optimized using a finite-difference time-domain simulation and fabricated on quartz substrates using electron beam lithography. The Au-nanopatterned chips were coated with porous silica by the sol-gel method, which enables detection of 20 ppm of SO2. The sensitivity of the porous-silica-coated chip was four times higher than that of the uncoated chip. Modification of the porous silica layer with 3-aminopropyltrimethoxysilane (APTMS) using chemical vapor deposition further enhanced the sensitivity to SO2gas, which was 13 times higher than that of the unmodified porous-silica-coated chip. Depth profiles by X-ray photoelectron spectroscopy indicated that APTMS was uniformly introduced into the porous silica layer. This study demonstrates that porous silica coatings on Au-nanopatterned chips and their additional modification with functional groups are potentially important to develop a low-cost and sensitive sensor for inorganic gases such as SO2.